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Paper Titles
Solubility of the Native Deep-Level Defect Typical of LPE-Grown AlGaAs
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Reduction of Capture Barrier Height of Pressure-Induced Deep Donors (DX Center)in GaAs:Si
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Degeneracy Factor and Pressure Dependence of Si-Induced Deep Impurity States in AlxGa1-xAs from Transport Experiments under Hydrostatic Pressure
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Photoluminescence Uniaxial Stress Study of Fe2+ in InP
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Optical Absorption and EPR of V4+ in GaP
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Capture and Recombination Processes in Epitaxial Fe-Doped InP
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Photoluminescence Uniaxial Stress Study of Fe2+ in...

Photoluminescence Uniaxial Stress Study of Fe2+ in InP

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

869-874

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.869

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Online since:

January 1989

Authors:

Klaus Thonke, Klaus Pressel, H.U. Hermann, Achim Dörnen

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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