Deep Levels due to 4d- and 5d-Transition Element Impurties in III-V Semiconductors

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Periodical:

Materials Science Forum (Volumes 38-41)

Edited by:

G. Ferenczi

Pages:

779-784

DOI:

10.4028/www.scientific.net/MSF.38-41.779

Citation:

A.A. Gippius et al., "Deep Levels due to 4d- and 5d-Transition Element Impurties in III-V Semiconductors", Materials Science Forum, Vols. 38-41, pp. 779-784, 1989

Online since:

January 1991

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$35.00

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