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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Deep Levels due to 4d- and 5d-Transition Element...

Deep Levels due to 4d- and 5d-Transition Element Impurties in III-V Semiconductors

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

779-784

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.779

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Online since:

January 1989

Authors:

A.A. Gippius, V.V. Chernyaev, N.Yu. Ponomarev, V.V. Ushakov

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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