Paper Titles

Characterization of an Anion Antisite Defect as a Deep Double Donor in InP
p.761

Optically Detected Magnetic Resonance Studies of Bound Exciton Triplets for Complex Defects in GaP
p.769

Isotopic Effects in GaAs:Ni
p.775

Deep Levels due to 4d- and 5d-Transition Element Impurties in III-V Semiconductors
p.779

Determination of the FR3 Acceptor Level by Direct Excitation of the FR3 EPR in Undoped Semiinsulating GaAs
p.785

Positron Annihilation Spectroscopy of the Native Vacancies in As-Grown GaAs
p.791

Magnetic Circular Dichroism Investigation of the Neutral and the Ionized Manganese Acceptor in GaAs
p.797

Interpretation of the Electric Field Dependent Thermal Emission Data of Deep Traps
p.803

Optically Anisotropic Deep Luminescent Centers in GaAs
p.809

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Determination of the FR3 Acceptor Level by Direct...

Determination of the FR3 Acceptor Level by Direct Excitation of the FR3 EPR in Undoped Semiinsulating GaAs

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 15

Info:

Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

785-790

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.785

Citation:

Cite this paper

Online since:

January 1989

Authors:

M. Baeumler, Patricia M. Mooney, Ulrich Kaufmann

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1989 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: