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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Hall Mobility Reduction due to Electron Scattering...

Hall Mobility Reduction due to Electron Scattering by Potential Fluctuation in Si-GaAs

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

929-934

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.929

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Online since:

January 1989

Authors:

Y. Nakamura, Y.H. Ohtsuki, T. Kikuta

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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