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Hall Mobility Reduction due to Electron Scattering by Potential Fluctuation in Si-GaAs
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Defect Structure in Laser Diodes
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Nonstoichiometry Related Acceptors in GaAs
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Hall Effects, DLTS and Optical Investigations on the Intrinsic 78/203 meV Acceptor in GaAs
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Dislocations and Microdefects in Bridgman GaAs
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Charge States of Hydrogen in p-Type and n-Type Silicon
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The Electronic Structure of Isolated Atomic Hydrogen or Muonium in Si and GaAs
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Electronic Structure of Hydrogen and Shallow Acceptor Complexes in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Hall Effects, DLTS and Optical Investigations on...

Hall Effects, DLTS and Optical Investigations on the Intrinsic 78/203 meV Acceptor in GaAs

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

951-956

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.951

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Online since:

January 1989

Authors:

G. Roos, Adolf Schöner, Gerhard Pensl, K. Krambrock, B.K. Meyer, Johann Martin Spaeth, J. Wagner

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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