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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Electrical Characterization of Ni/Porous SiC/n-SiC...

Electrical Characterization of Ni/Porous SiC/n-SiC Structure

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

419-422

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.419

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Online since:

September 2003

Authors:

A.E. Grekov, Stanislav I. Soloviev, Taniya Das, Tangali S. Sudarshan

Keywords:

I-V Characteristic, Nickel Contacts, Porous SiC, Scanning Electron Microscope (SEM), Surface Morphology

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[1] H. Mumira, T. Matsumoto and Y. Kanemitsu. J. Non-Crystal Solids. 198 (1996) 2.

[2] K.H. Wu, Y.K. Fang et al. Electron. Lett. 34 (1998) 2243.

[3] T. Das, S. Soloviev, J. Bai, P.I. Gouma, and T.S. Sudarshan. Presented on Electronics Material Conference, Santa Barbara, June 25-28, (2002).

[4] S. Soloviev, T. Das and T.S. Sudarshan. Accepted for publication in J. Electrochem. Soc 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 1. 4 1. 6 1E15 1E16 1E17 Corrier Density, cm -3 Depth, µm.

2 4 6 8 10.

[10] [20] [30] [40] [50] Capacitance, pF Voltage, V Fig. 3 (a) C-V characteristic and (b) Carrier density profile of the Ni / porSiC / SiC structure. a) b) 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 1. 4 1. 6 1E15 1E16 1E17 Corrier Density, cm -3 Depth, µm.

2 4 6 8 10.

[10] [20] [30] [40] [50] Capacitance, pF Voltage, V 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 1. 4 1. 6 1E15 1E16 1E17 Corrier Density, cm -3 Depth, µm.

2 4 6 8 10.

[10] [20] [30] [40] [50] Capacitance, pF Voltage, V Fig. 3 (a) C-V characteristic and (b) Carrier density profile of the Ni / porSiC / SiC structure. a) b).