From Transport Measurements to Infrared Reflectance Spectra of n-Type Doped 4H-SiC Layer Stacks

Julien Pernot; Jean Camassel; Hervé Peyre; Jean-Louis Robert

doi:10.4028/www.scientific.net/MSF.433-436.403

Paper Titles

High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers
p.387

Modeling of Lattice Heat Conductivity and Thermopower in SiC Considering the Four-Phonon Scattering Processes
p.391

Improved p-Type Conductivity in Heavily Al-Doped SiC by Ion-Beam-Induced Nano-Crystallization
p.395

Transport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ Doping
p.399

From Transport Measurements to Infrared Reflectance Spectra of n-Type Doped 4H-SiC Layer Stacks
p.403

Impact of Phonon Drag Effect on Seebeck Coefficient in p-6H-SiC: Experiment and Simulation
p.407

Parameters of Electron-Hole Scattering in Silicon Carbide
p.411

Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy
p.415

Electrical Characterization of Ni/Porous SiC/n-SiC Structure
p.419

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436From Transport Measurements to Infrared...

From Transport Measurements to Infrared Reflectance Spectra of n-Type Doped 4H-SiC Layer Stacks

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 2002

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

403-406

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.403

Citation:

Cite this paper

Online since:

September 2003

Authors:

Julien Pernot, Jean Camassel, Hervé Peyre, Jean-Louis Robert

Keywords:

Doping Levels, Hall-Effect, Infrared Reflectivity, Mobility, Plasma Frequency, Resistivity Level

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] M.F. MacMillan et al, Mater. Sci. Forum 264-268 (1998) p.645.

Google Scholar

[2] R.J. Gonzalez, R. Zallen and H. Berger, Phys. Rev. B 55 (1997) p.7014.

Google Scholar

[3] J. Pernot et al, Mater. Sci. Forum 353-356 (2001) p.385.

Google Scholar

[4] T. Kimoto et al, Appl. Phys. Lett. 79 (2001) p.2761.

Google Scholar

[5] J. Pernot et al, J. Appl. Phys. 90 (2001) p.1869.

Google Scholar

[6] J. Pernot et al, Appl. Phys. Lett. 77 (2000) p.4359.

Google Scholar

[7] M. Laube et al, J. Appl. Phys. 92 (2002) p.549.

Google Scholar

[8] J.L. Robert et al., Sensors and Actuators A 97-98C (2002) p.27.

Google Scholar

[9] C. Persson, U. Lindefelt and B.E. Sernelius, Phys. Rev. B 60 (1999) p.16479.

Google Scholar

[10] O.S. Heavens: Optical Properties of Thin Solid Films (Dover Publications Inc, N.Y. 1965).

Google Scholar