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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436High Temperature Deep Level Transient Spectroscopy...

High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

387-390

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.387

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Online since:

September 2003

Authors:

Adolf Schöner, Keiko Fujihira, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

Chimney CVD-Reactor, Deep Impurities, Epitaxial Layer, Hot Wall CVD-Reactor, HT-DLTS, Z₁-Center

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[1] K. Fujihira, T. Kimoto, and H. Matsunami, Appl. Phys. Lett. vol. 80 (2002), p.1586

[2] T. Kimoto, S. Nakazawa, K. Hashimoto, and H. Matsunami, Appl. Phys. Lett. vol. 79 (2001), p.2761

[3] S. Weiss and R. Kassing, Solid State Electronics vol. 31 (1988), p.1733 Fig. 4 Growth rate dependence of the net doping concentration and the trap concentration of the Z1-center and the 1.9eV- center. Shown are results from different oriented wafers grown in the hotwall and the chimney reactor. Growth rate (µm/h) 4 5 6 7 8 9 20 30 40 50 60 70 10 Concentration (cm-3) 1011 1012 1013 1014 1015 1016 n-type 4H-SiC Chimney Hotwall Z1-center 1.9eV-center net doping (0001) (03-38)