High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

387-390

DOI:

10.4028/www.scientific.net/MSF.433-436.387

Citation:

A. Schöner et al., "High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers", Materials Science Forum, Vols. 433-436, pp. 387-390, 2003

Online since:

September 2003

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$35.00

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