Majority Traps Observed in H+- or He+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

379-382

DOI:

10.4028/www.scientific.net/MSF.433-436.379

Citation:

S. A. Reshanov et al., "Majority Traps Observed in H+- or He+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy", Materials Science Forum, Vols. 433-436, pp. 379-382, 2003

Online since:

September 2003

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