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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Majority Traps Observed in H+- or He+-Implanted...

Majority Traps Observed in H⁺- or He⁺-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

379-382

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.379

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Online since:

September 2003

Authors:

Sergey A. Reshanov, O. Klettke, Gerhard Pensl

Keywords:

Admittance Spectroscopy, Al-Related Centers, Deep Level Transient Spectroscopy, Implantation-Induced Defects

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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