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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Non-Destructive SiC Wafer Evaluation Based on an...

Non-Destructive SiC Wafer Evaluation Based on an Optical Stress Technique

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

361-364

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.361

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Online since:

September 2003

Authors:

Xian Yun Ma, Mathew Parker, Yuefei Ma, T. Kubota, Tangali S. Sudarshan

Keywords:

Defect, Micropipe, Optical Stress Technique, Photoelastic, Silicon Carbide (SiC), Structural Characterisation

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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