Dll PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiC

F.H.C. Carlsson; S.G. Sridhara; Anders Hallén; Peder Bergman; Erik Janzén

doi:10.4028/www.scientific.net/MSF.433-436.345

Paper Titles

Infrared Optical Properties of 3C, 4H and 6H Silicon Carbide
p.329

Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
p.333

Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
p.337

Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiC
p.341

D_ll PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiC
p.345

Application of UV Scanning Photoluminescence Spectroscopy for Minority Carrier Lifetime Mapping
p.349

Raman Imaging Analysis of SiC Wafers
p.353

Simple Method for Mapping Optical Defects in Insulating Silicon Carbide Wafers
p.357

Non-Destructive SiC Wafer Evaluation Based on an Optical Stress Technique
p.361

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D_ll PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiC

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Materials Science Forum (Volumes 433-436)

Pages:

345-348

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.345

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Online since:

September 2003

Authors:

F.H.C. Carlsson, S.G. Sridhara, Anders Hallén, Peder Bergman, Erik Janzén

Keywords:

Annealing, D_II, Ion Implantation, Silicon Carbide (SiC)

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