Raman Imaging Analysis of SiC Wafers

Michel Mermoux; Alexandre Crisci; Francis Baillet

doi:10.4028/www.scientific.net/MSF.433-436.353

Paper Titles

Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
p.337

Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiC
p.341

D_ll PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiC
p.345

Application of UV Scanning Photoluminescence Spectroscopy for Minority Carrier Lifetime Mapping
p.349

Raman Imaging Analysis of SiC Wafers
p.353

Simple Method for Mapping Optical Defects in Insulating Silicon Carbide Wafers
p.357

Non-Destructive SiC Wafer Evaluation Based on an Optical Stress Technique
p.361

Electrical and Optical Characterization of SiC
p.365

Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC
p.371

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Raman Imaging Analysis of SiC Wafers

Raman Imaging Analysis of SiC Wafers

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Silicon Carbide and Related Materials - 2002

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Materials Science Forum (Volumes 433-436)

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353-356

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.353

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Online since:

September 2003

Authors:

Michel Mermoux, Alexandre Crisci, Francis Baillet

Keywords:

Doping, Micropipe, Raman Imaging, Silicon Carbide (SiC), Stress

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References

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