Raman Imaging Analysis of SiC Wafers

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

353-356

DOI:

10.4028/www.scientific.net/MSF.433-436.353

Citation:

M. Mermoux et al., "Raman Imaging Analysis of SiC Wafers", Materials Science Forum, Vols. 433-436, pp. 353-356, 2003

Online since:

September 2003

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$35.00

[1] S. Nakashima ans H. Harima, Phys. Stat. Sol. (a) 162 (1997) 39.

[2] A. Haouni, M. Mermoux, B. Marcus, L. Abello and G. Lucazeau, Diam. Relat. Mat. 8 (1999) 657.

[3] M. Mermoux, B. Marcus, G. M. Swain and J. E. Butler, J. Phys. Chem. B, accepted.

[4] F. A. Ponce, J. W. Steeds, C. D. Dyer and G. D. Pitt, Appl. Phys. Lett., 69 (1996) 2650.

[5] H. Rho, H. E. Jackson and B. L. Weiss, Appl. Phys. Lett. 75 (1999) 1287 776. 4 776. 2 776. 0 967. 0 966. 5 966. 0.

[10] [9] [8] [7] x10 -3.

[80] [60] [40] a b c d.

[50] 100 Length Y (µm).

50 100 Length X (µm) 776. 4 776. 2 776. 0 967. 0 966. 5 966. 0.

[10] [9] [8] [7] x10 -3.

[80] [60] [40] a b c d.

[50] 100 Length Y (µm).

50 100 Length X (µm).

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