Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals

Matthias Bickermann; Roland Weingärtner; Z.G. Herro; Dieter Hofmann; Ulrike Künecke; Peter J. Wellmann; Albrecht Winnacker

doi:10.4028/www.scientific.net/MSF.433-436.337

Paper Titles

Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and Aluminum
p.321

Raman Excitation Profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC
p.325

Infrared Optical Properties of 3C, 4H and 6H Silicon Carbide
p.329

Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
p.333

Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
p.337

Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiC
p.341

D_ll PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiC
p.345

Application of UV Scanning Photoluminescence Spectroscopy for Minority Carrier Lifetime Mapping
p.349

Raman Imaging Analysis of SiC Wafers
p.353

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Electrical and Optical Characterization of p-Type...

Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals

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Silicon Carbide and Related Materials - 2002

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Materials Science Forum (Volumes 433-436)

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337-340

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https://doi.org/10.4028/www.scientific.net/MSF.433-436.337

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Online since:

September 2003

Authors:

Matthias Bickermann, Roland Weingärtner, Z.G. Herro, Dieter Hofmann, Ulrike Künecke, Peter J. Wellmann, Albrecht Winnacker

Keywords:

Boron Doping, Hall-Effect, Homogeneous Incorporation, Optical Absorption, Optically Determined Band-Gap, p-Type SiC

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References

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