Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy
p.305
p.305
Photoluminescence Up-Conversion Processes in SiC
p.309
p.309
New Photoluminescence Features in 4H-SiC Induced by Hydrogenation
p.313
p.313
Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current Spectroscopy
p.317
p.317
Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and Aluminum
p.321
p.321
Raman Excitation Profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC
p.325
p.325
Infrared Optical Properties of 3C, 4H and 6H Silicon Carbide
p.329
p.329
Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
p.333
p.333
Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
p.337
p.337
Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and Aluminum
Abstract:
Info:
Periodical:
Materials Science Forum (Volumes 433-436)
Main Theme:
Edited by:
Peder Bergman and Erik Janzén
Pages:
321-324
Citation:
I. G. Ivanov et al., "Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and Aluminum", Materials Science Forum, Vols. 433-436, pp. 321-324, 2003
Online since:
September 2003
Authors:
Price:
$38.00
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