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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Donor-Acceptor Pair Luminescence in 4H-SiC Doped...

Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and Aluminum

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

321-324

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.321

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Online since:

September 2003

Authors:

Ivan G. Ivanov, Alexsandre Ellison, Erik Janzén

Keywords:

Donor-Acceptor Pair Recombination, Ionization Energy, Luminescence

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[2] For a review, see A. M. Stoneham: Theory of Defects in Solids: Electronic Structure of Defects in Insulators and Semiconductors (Clarendon Press - Oxford, England 1975), Chapter 25.

[3] S.H. Hagen A.W.C. van Kemenade and J.A.W. van Der Does De Bye: J. Lumin. Vol. 8(1973), p.18.

[4] M. Ikeda, H. Matsunami, and T. Tanaka: Phys. Rev. B Vol. 22 (1980), p.2842.

[5] P. J. Dean and L. Patrick: Phys. Rev. B Vol. 2 (1970), p.1888.

[6] I. G. Ivanov, B. Magnusson and E. Janzén, to be published.

[7] I. G. Ivanov, J. Zhang, L. Storasta and E. Janzén, Proc. of thr International Conference on Silicon Carbide and Related Materials 2001 (Trans Tech Publications, Switzerland 2002), p.613.

[8] For a recent review, see S. Greulich-Weber, Phys. Stat. Sol. (a) Vol. 162 (1997).