Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current Spectroscopy

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

317-320

DOI:

10.4028/www.scientific.net/MSF.433-436.317

Citation:

S. Binetti et al., "Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current Spectroscopy", Materials Science Forum, Vols. 433-436, pp. 317-320, 2003

Online since:

September 2003

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$35.00

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