Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current Spectroscopy

Simona Binetti; Alessia Le Donne; Maurizio Acciarri; M. Cerminara; Sergio Pizzini

doi:10.4028/www.scientific.net/MSF.433-436.317

Paper Titles

Time-Resolved Photoluminescence of Deep Centers in Semi-Insulating 4H-SiC
p.301

Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy
p.305

Photoluminescence Up-Conversion Processes in SiC
p.309

New Photoluminescence Features in 4H-SiC Induced by Hydrogenation
p.313

Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current Spectroscopy
p.317

Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and Aluminum
p.321

Raman Excitation Profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC
p.325

Infrared Optical Properties of 3C, 4H and 6H Silicon Carbide
p.329

Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
p.333

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Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current Spectroscopy

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Materials Science Forum (Volumes 433-436)

Pages:

317-320

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.317

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Online since:

September 2003

Authors:

Simona Binetti, Alessia Le Donne, Maurizio Acciarri, M. Cerminara, Sergio Pizzini

Keywords:

Atomic Force Microscope (AFM), Extended Defects, LBIC, Micropipe, Photoluminescence Spectroscopy

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