Paper Titles

New Photoluminescence Features in 4H-SiC Induced by Hydrogenation
p.313

Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current Spectroscopy
p.317

Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and Aluminum
p.321

Raman Excitation Profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC
p.325

Infrared Optical Properties of 3C, 4H and 6H Silicon Carbide
p.329

Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
p.333

Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
p.337

Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiC
p.341

D_ll PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiC
p.345

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Infrared Optical Properties of 3C, 4H and 6H...

Infrared Optical Properties of 3C, 4H and 6H Silicon Carbide

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

329-332

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.329

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Online since:

September 2003

Authors:

O.P. Alexander Lindquist, H. Arwin, Anne Henry, K. Järrendahl

Keywords:

Dielectric Function, Ellipsometry, Silicon Carbide (SiC)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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