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New Photoluminescence Features in 4H-SiC Induced by Hydrogenation
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Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current Spectroscopy
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Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and Aluminum
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Raman Excitation Profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC
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Infrared Optical Properties of 3C, 4H and 6H Silicon Carbide
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Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
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Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
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Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Raman Excitation Profiles of 3C-, 4H-, 6H-, 15R-...

Raman Excitation Profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

325-328

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.325

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Online since:

September 2003

Authors:

Roland Püsche, Martin Hundhausen, Lothar Ley

Keywords:

Excitation Profiles, Hexagonality, Polytype, Raman Spectroscopy

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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