Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiC

Roland Weingärtner; Albrecht Winnacker; Peter J. Wellmann

doi:10.4028/www.scientific.net/MSF.433-436.341

Paper Titles

Raman Excitation Profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC
p.325

Infrared Optical Properties of 3C, 4H and 6H Silicon Carbide
p.329

Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
p.333

Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
p.337

Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiC
p.341

D_ll PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiC
p.345

Application of UV Scanning Photoluminescence Spectroscopy for Minority Carrier Lifetime Mapping
p.349

Raman Imaging Analysis of SiC Wafers
p.353

Simple Method for Mapping Optical Defects in Insulating Silicon Carbide Wafers
p.357

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Determination of Exciton Capture Cross-Sections of...

Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiC

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Silicon Carbide and Related Materials - 2002

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Materials Science Forum (Volumes 433-436)

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341-344

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https://doi.org/10.4028/www.scientific.net/MSF.433-436.341

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Online since:

September 2003

Authors:

Roland Weingärtner, Albrecht Winnacker, Peter J. Wellmann

Keywords:

Bound Exciton, Exciton Tails, Lattice Site, Nitrogen Donor, Photoluminescence (PL)

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