Application of UV Scanning Photoluminescence Spectroscopy for Minority Carrier Lifetime Mapping

L. Masarotto; Jean Marie Bluet; I. El Harrouni; Gérard Guillot

doi:10.4028/www.scientific.net/MSF.433-436.349

Paper Titles

Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
p.333

Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
p.337

Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiC
p.341

D_ll PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiC
p.345

Application of UV Scanning Photoluminescence Spectroscopy for Minority Carrier Lifetime Mapping
p.349

Raman Imaging Analysis of SiC Wafers
p.353

Simple Method for Mapping Optical Defects in Insulating Silicon Carbide Wafers
p.357

Non-Destructive SiC Wafer Evaluation Based on an Optical Stress Technique
p.361

Electrical and Optical Characterization of SiC
p.365

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Application of UV Scanning Photoluminescence Spectroscopy for Minority Carrier Lifetime Mapping

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Silicon Carbide and Related Materials - 2002

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Materials Science Forum (Volumes 433-436)

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349-352

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https://doi.org/10.4028/www.scientific.net/MSF.433-436.349

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September 2003

Authors:

L. Masarotto, Jean Marie Bluet, I. El Harrouni, Gérard Guillot

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Minority Carrier Lifetime, Photoluminescence Mapping

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References

[1] L. Masarotto, J-M Bluet, M. Berenguer, P. Girard and G. Guillot, Mat. Science For. 333-356, (2001), p.393.

DOI: 10.4028/www.scientific.net/msf.353-356.393

Google Scholar

[2] L. Masarotto, J-M Bluet, and G. Guillot, Mat. Science For. 389-396, (2002), p.601.

Google Scholar

[3] A. Galeckas, J. Linnros, V. Grivickas, U. Lindelfelt, and C. Hallin, Appl. Phys. Lett. 71 (1997), p.3269.

DOI: 10.1063/1.120309

Google Scholar

[4] A. Galeckas, J. Linnros, V. Grivickas, U. Lindelfelt and C. Hallin, Mat. Science For. 264-268 (1998), p.533.

DOI: 10.4028/www.scientific.net/msf.264-268.533

Google Scholar

[5] S.G. Srhidara, T.J. Eperjesi, R. P. Devaty and W.J. Choyke, Mat. Science For. 338-342 (2000), p.551.

Google Scholar

[6] A. Galeckas, J. Linros, M. Frischholz and V. Grivickas, Appl. Phys. Lett. 79 (2001), p.365.

Google Scholar

[7] O. Kordina, J. P. Bergman, C. Hallin and E. Janzen, Appl. Phys. Lett. 69 (1996), p.679.

Google Scholar