Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy

Vito Raineri; Lucia Calcagno; Filippo Giannazzo; D. Goghero; F. Musumeci; Fabrizio Roccaforte; Francesco La Via

doi:10.4028/www.scientific.net/MSF.433-436.375

Paper Titles

Simple Method for Mapping Optical Defects in Insulating Silicon Carbide Wafers
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Non-Destructive SiC Wafer Evaluation Based on an Optical Stress Technique
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Electrical and Optical Characterization of SiC
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Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC
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Activation Study of Implanted N⁺ in 6H-SiC by Scanning Capacitance Microscopy
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Majority Traps Observed in H⁺- or He⁺-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy
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On the Unusual Nature of a DLTS-Detected Defect in Bulk n-Type 6H-SiC
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High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers
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Modeling of Lattice Heat Conductivity and Thermopower in SiC Considering the Four-Phonon Scattering Processes
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Activation Study of Implanted N⁺ in 6H-SiC by Scanning Capacitance Microscopy

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

375-378

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.375

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Online since:

September 2003

Authors:

Vito Raineri, Lucia Calcagno, Filippo Giannazzo, D. Goghero, F. Musumeci, Fabrizio Roccaforte, Francesco La Via

Keywords:

Dopant Activation, Ion Implantation, Scanning Capacitance Microscopy

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References

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