Transport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ Doping

P. Terziyska; Julien Pernot; Sylvie Contreras; Jean-Louis Robert; Lea Di Cioccio; Thierry Billon

doi:10.4028/www.scientific.net/MSF.433-436.399

Paper Titles

On the Unusual Nature of a DLTS-Detected Defect in Bulk n-Type 6H-SiC
p.383

High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers
p.387

Modeling of Lattice Heat Conductivity and Thermopower in SiC Considering the Four-Phonon Scattering Processes
p.391

Improved p-Type Conductivity in Heavily Al-Doped SiC by Ion-Beam-Induced Nano-Crystallization
p.395

Transport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ Doping
p.399

From Transport Measurements to Infrared Reflectance Spectra of n-Type Doped 4H-SiC Layer Stacks
p.403

Impact of Phonon Drag Effect on Seebeck Coefficient in p-6H-SiC: Experiment and Simulation
p.407

Parameters of Electron-Hole Scattering in Silicon Carbide
p.411

Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy
p.415

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Transport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ Doping

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Silicon Carbide and Related Materials - 2002

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Materials Science Forum (Volumes 433-436)

Pages:

399-402

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.399

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Online since:

September 2003

Authors:

P. Terziyska, Julien Pernot, Sylvie Contreras, Jean-Louis Robert, Lea Di Cioccio, Thierry Billon

Keywords:

Hall-Effect, Mobility, Nitrogen Implantation

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