Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

415-418

DOI:

10.4028/www.scientific.net/MSF.433-436.415

Citation:

P. Lévêque et al., "Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy", Materials Science Forum, Vols. 433-436, pp. 415-418, 2003

Online since:

September 2003

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