Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy

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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

415-418

Citation:

P. Lévêque et al., "Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy", Materials Science Forum, Vols. 433-436, pp. 415-418, 2003

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September 2003

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[4] P. Pellegrino, PhD thesis, Royal Institute of Technology, Sweden (2001).

[2] [4] [6] [8] [10] [12] 80 120 160 200 240 280 320 Temperature (K) DLTS Signal (∆∆∆∆C/C)*10 -3 irradiated 5' annealing 20' annealing.

[80] ' annealing.