Paper Titles

Transport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ Doping
p.399

From Transport Measurements to Infrared Reflectance Spectra of n-Type Doped 4H-SiC Layer Stacks
p.403

Impact of Phonon Drag Effect on Seebeck Coefficient in p-6H-SiC: Experiment and Simulation
p.407

Parameters of Electron-Hole Scattering in Silicon Carbide
p.411

Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy
p.415

Electrical Characterization of Ni/Porous SiC/n-SiC Structure
p.419

Correlation between Electrical and Optical Mapping of Boron Related Complexes in 4H-SiC
p.423

Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region
p.427

Mapping on Bulk and Epitaxy Layer 4H-SiC
p.431

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Defect Evolution in Proton-Irradiated 4H SiC...

Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 2002

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

415-418

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.415

Citation:

Cite this paper

Online since:

September 2003

Authors:

P. Lévêque, D.M. Martin, Bengt Gunnar Svensson, Anders Hallén

Keywords:

4H-SiC, Defect, DLTS

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2003 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] J.P. Biersack and L.G. Haggmark, Nucl. Instr. and Meth. Vol. 170 (1980), p.208.

[2] B.G. Svensson, K. -H. Rydén and B.M.S. Lewerentz, J. Appl. Phys. Vol. 66 (1989), p.1699.

[3] J.P. Doyle, M.K. Linnarsson, P. Pellegrino, N. Keskitalo, B.G. Svensson, A. Schöner, N. Nordell and J.L. Lindström, J. Appl. Phys. Vol. 84 (1998), p.1354.

DOI: 10.1063/1.368247

[4] P. Pellegrino, PhD thesis, Royal Institute of Technology, Sweden (2001).

[2] [4] [6] [8] [10] [12] 80 120 160 200 240 280 320 Temperature (K) DLTS Signal (∆∆∆∆C/C)*10 -3 irradiated 5' annealing 20' annealing.

[80] ' annealing.