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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Breakdown Electric Field in 4H-SiC Epitaxial Layer...

Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

435-438

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.435

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Online since:

September 2003

Authors:

Rudi Ono, Makato Fujimaki, Hoon Joo Na, Satoshi Tanimoto, Takashi Shinohe, Tsutomu Yatsuo, Hideyo Okushi, Kazuo Arai

Keywords:

Breakdown Voltage, Deep Level, Dopant Concentration, Epitaxy, ICTS, Substrate

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[1] S.Nakamura, T.Kumatani, T.Kimoto, H.Matsunami, Japan Soc. Appl. Phys., The 10th Symposium on SiC and Wideband Gap Related Materials, (2001) p-29

[2] Q.Wahab, A.Ellison, A.Henry, E.Janzen, A.Hallin, J.Di Persio and R.Martinez, Appl.Phys.Lett., 76, (2000), p.2725

DOI: 10.1063/1.126456

[3] S.M. Sze, Physic of Semiconductor Devices, 2 nd ed., Wiley, Ney York, (1981)

[4] A.O. Konstantinov, Q.Wahad, N.Nordell and U.Lindefelt, J.Electronic Mater., 27, (1998) p.335

[5] D.S. Byeon, M.K. Han, Y.I. Choi, J.Appl.Phys., 79, (1996) p.2796

[6] H.Okushi, Phil. Mag. B, 52, (1985) p.33

[7] Rudi ONO et al, will be submitted elsewhere.

[8] T.Dalibor, G.Pensl, H.Matsunami, T.Kimoto, W.J. Choykey, A.Schorer and N.Nordell, Phys. Stat. Sol.(a), 162, (1997) p.165

[9] W.Si and M.Dudley, J.Electron Mater., 26, (1997) p.151

[10] G.Augustine, N.H. Hoogbood, V.B. Krishna and R.Hopkins, Phys.Status Solidi, B202, (1997) p.137

[11] Rudi ONO et al, will be submitted elsewhere.� 0.20 0.15 0.10 0.05 0.00 St (pF-2 ) 10-5 10-4 10-3 10-2 10-1 100 Tim e (s) Theoretical plot Fig.4 ICTS spectrum detected in epitaxy layer grown on the substrate with Nd=1E19cm -3. Measurement was taken at temperature of 300K, with pulse width = 10 ms, pulse voltage= 1V and applied bias V= -1 V.