Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates

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Materials Science Forum (Volumes 433-436)

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Peder Bergman and Erik Janzén

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435-438

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R. Ono et al., "Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates", Materials Science Forum, Vols. 433-436, pp. 435-438, 2003

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September 2003

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[11] Rudi ONO et al, will be submitted elsewhere. � 0. 20 0. 15 0. 10 0. 05 0. 00 St (pF-2 ) 10-5 10-4 10-3 10-2 10-1 100 Tim e (s) Theoretical plot Fig. 4 ICTS spectrum detected in epitaxy layer grown on the substrate with Nd=1E19cm -3. Measurement was taken at temperature of 300K, with pulse width = 10 ms, pulse voltage= 1V and applied bias V= -1 V.