Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

435-438

DOI:

10.4028/www.scientific.net/MSF.433-436.435

Citation:

R. Ono et al., "Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates", Materials Science Forum, Vols. 433-436, pp. 435-438, 2003

Online since:

September 2003

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$35.00

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