Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiC

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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

447-450

Citation:

H. Matsuura et al., "Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiC", Materials Science Forum, Vols. 433-436, pp. 447-450, 2003

Online since:

September 2003

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DOI: https://doi.org/10.4028/www.scientific.net/msf.353-356.45

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