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Mapping on Bulk and Epitaxy Layer 4H-SiC
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Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates
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Electron-Induced Damage Effects in 4H-SiC Schottky Diodes
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Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation
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Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiC
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Electrical Characteristics of Plasma-Enhanced Chemical Vapor Deposited Silicon Carbide Thin Films
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Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes
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Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers
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Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters
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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Real Relationship between Acceptor Density and...

Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiC

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

447-450

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.447

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Online since:

September 2003

Authors:

Hideharu Matsuura, K. Sugiyama, Kimito Nishikawa, T. Nagata, N. Fukunaga

Keywords:

Acceptor Density, Acceptor Level, Al Implantation, Excited State, Hall-Effect Measurement

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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