Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

443-446

DOI:

10.4028/www.scientific.net/MSF.433-436.443

Citation:

T. Hatakeyama et al., "Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation", Materials Science Forum, Vols. 433-436, pp. 443-446, 2003

Online since:

September 2003

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$35.00

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