Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

443-446

Citation:

T. Hatakeyama et al., "Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation", Materials Science Forum, Vols. 433-436, pp. 443-446, 2003

Online since:

September 2003

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[1] D. M. Caughey and R. E. Thomas: Proc. IEEE (1967), p.2192.

[2] W. J. Schaffer, G.H. Negley, K. G. Irvine and J.W. Palmour: Mat. Res. Soc. Symp. Proc. Vol. 339. (1994) p.595.

[3] G. Wellenhofer and U. Rössler: physica status solidi (b) Vol. 202, (1997) p.107.

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[1] 20 30 60 90 300K 200K Hole Mobility Ratio(µ(θ)/µ(45 o ) <1100> <0001> j µ<1-100> /µ<0001>=1. 15 Angle (degree) θ.

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[1] 2 0 30 60 90 300K 200K 100K Mobility Ratio(µ(θ)/µave) Angle (degree) <1100> <0001> j θ µ<1-100> /µ<0001>=0. 83 Electron Figures 4: Anisotropy of electron and hole mobilities in )0211( face Journal Title and Volume Number (to be inserted by the publisher) 5 Corresponding author: tetsuo2. hatakeyama@toshiba. co. jp, Phone: +81-44-549-2142, Fax: +81-44-520-1501.

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