Electrical Characteristics of Plasma-Enhanced Chemical Vapor Deposited Silicon Carbide Thin Films

Hoa Thi Mai Pham; Tolgay Akkaya; Charles R. de Boer; Pasqualina M. Sarro

doi:10.4028/www.scientific.net/MSF.433-436.451

Paper Titles

Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates
p.435

Electron-Induced Damage Effects in 4H-SiC Schottky Diodes
p.439

Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation
p.443

Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiC
p.447

Electrical Characteristics of Plasma-Enhanced Chemical Vapor Deposited Silicon Carbide Thin Films
p.451

Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes
p.455

Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers
p.459

Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters
p.463

Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions
p.467

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Electrical Characteristics of Plasma-Enhanced Chemical Vapor Deposited Silicon Carbide Thin Films

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

451-454

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.451

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Online since:

September 2003

Authors:

Hoa Thi Mai Pham, Tolgay Akkaya, Charles R. de Boer, Pasqualina M. Sarro

Keywords:

Conduction Method, Electrical Characteristics, In Situ Doped SiC, Micro-Electromechanical System (MEMS), PECVD SiC

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References

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