Electron-Induced Damage Effects in 4H-SiC Schottky Diodes

Antonio Castaldini; Anna Cavallini; Filippo Nava; P.G. Fuochi; P. Vanni

doi:10.4028/www.scientific.net/MSF.433-436.439

Paper Titles

Correlation between Electrical and Optical Mapping of Boron Related Complexes in 4H-SiC
p.423

Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region
p.427

Mapping on Bulk and Epitaxy Layer 4H-SiC
p.431

Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates
p.435

Electron-Induced Damage Effects in 4H-SiC Schottky Diodes
p.439

Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation
p.443

Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiC
p.447

Electrical Characteristics of Plasma-Enhanced Chemical Vapor Deposited Silicon Carbide Thin Films
p.451

Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes
p.455

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Electron-Induced Damage Effects in 4H-SiC Schottky Diodes

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Materials Science Forum (Volumes 433-436)

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439-442

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https://doi.org/10.4028/www.scientific.net/MSF.433-436.439

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Online since:

September 2003

Authors:

Antonio Castaldini, Anna Cavallini, Filippo Nava, P.G. Fuochi, P. Vanni

Keywords:

4H-SiC, DLTS, EBIC, Electron Irradiation, Energy Levels, Radiation Detector, Trap

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