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Electrical Characteristics of Plasma-Enhanced Chemical Vapor Deposited Silicon Carbide Thin Films
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Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes
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Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers
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Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters
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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Electrical Characterization of Erbium-Implanted...

Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

459-462

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.459

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Online since:

September 2003

Authors:

Sergey A. Reshanov, O. Klettke, Gerhard Pensl, Wolfgang J. Choyke

Keywords:

Deep Level Transient Spectroscopy, Erbium

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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