Sensitivity of Positron Annihilation Spectroscopy to Energy Contamination in Low Energy Boron Ion Implantation

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Periodical:

Materials Science Forum (Volumes 445-446)

Edited by:

Toshio Hyodo, Yoshinori Kobayashi, Yasuyuki Nagashima, Haruo Saito

Pages:

123-125

Citation:

A.P. Knights and P. G. Coleman, "Sensitivity of Positron Annihilation Spectroscopy to Energy Contamination in Low Energy Boron Ion Implantation", Materials Science Forum, Vols. 445-446, pp. 123-125, 2004

Online since:

January 2004

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[1] A P Knights and P G Coleman, Defects and Diffusion Forum, Vol. 183 (2000) p.41.

[2] P G Coleman, C P Burrows, and A P Knights, Appl. Phys. Lett., Vol. 80 (2002) p.947.

[3] The International Technology Roadmap for Semiconductors, Sematech, (2001).

[4] S M Sze, Physics of Semiconductor Devices (Wiley, New York 1981).

[5] G C Aers, in Positron Beams for Solids and Surfaces, Proceedings of SLOPOS IV (AIP 1991).

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800 0 200 400 600 Junction depth Xj (nm) Chi parameter Figure 3 – Sensitivity plot for � parameter, given by equation (1), versus junction depth. Figure 4 – Experimental plots of S versus E for boron implanted and annealed n-type silicon. Implant energy 2keV-closed squares, 10keV-open diamonds, 25keV-open squares and 2+10keV- closed diamonds. The solid line through the 2keV data is a fit using the four region model described in figure 1.

DOI: https://doi.org/10.7717/peerj.278/fig-2

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[1] 000 0 5 10 15 Incident Energy (keV) S parameter.