Positron-Electron Autocorrelation Function Study of E-Center in Phosphorus-Doped Silicon

K.F. Ho; C.D. Beling; S. Fung; M. Biasini; Gabriel Ferro; M. Gong

doi:10.4028/www.scientific.net/MSF.445-446.111

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Effect of Implanted Ion Mass and Incident Energy on Defect and Ion Depth-Distributions in Ion-Implanted Si
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Positron-Electron Autocorrelation Function Study of E-Center in Phosphorus-Doped Silicon
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Positron-Electron Autocorrelation Function Study of E-Center in Phosphorus-Doped Silicon

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Periodical:

Materials Science Forum (Volumes 445-446)

Pages:

111-113

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.445-446.111

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Online since:

January 2004

Authors:

K.F. Ho, C.D. Beling, S. Fung, M. Biasini, Gabriel Ferro, M. Gong

Keywords:

2D ACAR, Fourier Transformation, Positron-Electron Autocorrelation Function, Silicon E-Center, Silicon Localized Defect Orbitals

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References

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