Vacancy and Krypton Dynamics in Kr-Implanted Naturally Oxidized Aluminium

M. Härting; D.F. Kanguwe; C.M. Comrie; S. Nsengiyumva; S.R. Naidoo; T.E. Derry; D.T. Britton

doi:10.4028/www.scientific.net/MSF.445-446.102

Paper Titles

Positron Annihilation Studies in Amorphous Silicon Nitride
p.90

Comparison of Vacancy Creation by Nuclear and Electronic Processes in Silicon Irradiated with Swift Kr and Bi Ions
p.93

Positron Trapping in Deformed Copper Down to Millikelvins
p.96

Relaxation Process in Quenched-In Vacancies During Annealing in B2 FeAl Single Crystals
p.99

Vacancy and Krypton Dynamics in Kr-Implanted Naturally Oxidized Aluminium
p.102

The Effect of Hydrogen-Charging in Neutron Irradiated Nickel Studied by Positron Annihilation Lifetime Spectroscopy (PALS)
p.105

Effect of Implanted Ion Mass and Incident Energy on Defect and Ion Depth-Distributions in Ion-Implanted Si
p.108

Positron-Electron Autocorrelation Function Study of E-Center in Phosphorus-Doped Silicon
p.111

Defects in GaSb Studied by Coincidence Doppler Broadening Measurements
p.114

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Vacancy and Krypton Dynamics in Kr-Implanted Naturally Oxidized Aluminium

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Materials Science Forum (Volumes 445-446)

Pages:

102-104

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.445-446.102

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Online since:

January 2004

Authors:

M. Härting, D.F. Kanguwe, C.M. Comrie, S. Nsengiyumva, S.R. Naidoo, T.E. Derry, D.T. Britton

Keywords:

Defect Distribution, Ion Implantation, Stress-Assisted Diffusion

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