Positron Annihilation Studies in Amorphous Silicon Nitride

Paulo M. Gordo; Marco Duarte Naia; C. Lopes Gil; Adriano P. de Lima; G. Lavareda; C. Nunes de Carvalho; A. Amaral; Z. Kajcsos

doi:10.4028/www.scientific.net/MSF.445-446.90

Paper Titles

Depth Dependence of Defects in Ion-Implanted Si Probed by a Positron Beam
p.78

Positron Lifetime Studies of Non-Stoichiometric Defects in the γ-Phase Cu-Al and Cu-Ga Alloys
p.81

Positron Annihilation Study on Point Defects in Fe-Rh Alloys
p.84

Positron Annihilation Spectroscopy of Nanostructural Features in Model Reactor Pressure Vessel Steels
p.87

Positron Annihilation Studies in Amorphous Silicon Nitride
p.90

Comparison of Vacancy Creation by Nuclear and Electronic Processes in Silicon Irradiated with Swift Kr and Bi Ions
p.93

Positron Trapping in Deformed Copper Down to Millikelvins
p.96

Relaxation Process in Quenched-In Vacancies During Annealing in B2 FeAl Single Crystals
p.99

Vacancy and Krypton Dynamics in Kr-Implanted Naturally Oxidized Aluminium
p.102

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Positron Annihilation Studies in Amorphous Silicon Nitride

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Materials Science Forum (Volumes 445-446)

Pages:

90-92

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.445-446.90

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Online since:

January 2004

Authors:

Paulo M. Gordo, Marco Duarte Naia, C. Lopes Gil, Adriano P. de Lima, G. Lavareda, C. Nunes de Carvalho, A. Amaral, Z. Kajcsos

Keywords:

A-SiN_x:H, Defect, FT-IR, Positron Beam

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References

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