Depth Dependence of Defects in Ion-Implanted Si Probed by a Positron Beam

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Materials Science Forum (Volumes 445-446)

Edited by:

Toshio Hyodo, Yoshinori Kobayashi, Yasuyuki Nagashima, Haruo Saito

Pages:

78-80

Citation:

M. Fujinami et al., "Depth Dependence of Defects in Ion-Implanted Si Probed by a Positron Beam", Materials Science Forum, Vols. 445-446, pp. 78-80, 2004

Online since:

January 2004

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