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HomeMaterials Science ForumMaterials Science Forum Vols. 445-446Depth Dependence of Defects in Ion-Implanted Si...

Depth Dependence of Defects in Ion-Implanted Si Probed by a Positron Beam

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Materials Science Forum (Volumes 445-446)

Pages:

78-80

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.445-446.78

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Online since:

January 2004

Authors:

Masanori Fujinami, T. Miyagoe, Tsuguo Sawada, Ryoichi Suzuki, Toshiyuki Ohdaira, Takashi Akahane

Keywords:

Coincidence Doppler Broadening, Defect Profile, He, Ion Implantation, Silicon

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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