Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Paul G. Coleman; X.D. Pi; Russell Gwilliam; Brian J. Sealy

doi:10.4028/www.scientific.net/MSF.445-446.66

Paper Titles

Vacancy Formation in GaAs under Different Equilibrium Conditions
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Ion-Implantation Induced Defects in ZnO Studied by a Slow Positron Beam
p.57

Hydrogen-Induced Defects in Niobium Studied by Positron Annihilation
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2D-Coincidence Doppler Broadening Measurements on Neutron-Irradiated VVER-Type Reactor Pressure Vessel Steels
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Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy
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Defect Characterization of the Structure-Growth Zone-Model for Sputter Deposited Cu Films
p.69

Subsurface Zones in Aluminium Detected by Positron Lifetime Spectroscopy
p.72

Positron Spectroscopy Analysis of Vacancy-Solute Nanoaggregates in Al-Cu
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Depth Dependence of Defects in Ion-Implanted Si Probed by a Positron Beam
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Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

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Materials Science Forum (Volumes 445-446)

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66-68

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https://doi.org/10.4028/www.scientific.net/MSF.445-446.66

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January 2004

Authors:

Paul G. Coleman, X.D. Pi, Russell Gwilliam, Brian J. Sealy

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Interface, Positron Annihilation, Silicon Dioxide, Silicon Nanocrystals

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