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HomeMaterials Science ForumMaterials Science Forum Vols. 445-446Effect of Implanted Ion Mass and Incident Energy...

Effect of Implanted Ion Mass and Incident Energy on Defect and Ion Depth-Distributions in Ion-Implanted Si

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Periodical:

Materials Science Forum (Volumes 445-446)

Pages:

108-110

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.445-446.108

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Online since:

January 2004

Authors:

Kouichi Hirata, Yoshinori Kobayashi

Keywords:

Defect, Ion Implantation

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[2] G. C. Aers, in positron Beams for Solids and Surfaces, edited by P. J. Schultz, G. R. Massoumi and P. J. Simpson (American Institute of Physics, New York, 1990), vol. 218, p.162.

[3] H. Kauppinen, C. Corbel, K. Skog, K. Saarinen, T. Laine, P. Hautojärvi, P. Desgardin, and E. Ntsoenzok: Phys. Rev. B 55, 9598 (1997).

DOI: 10.1103/physrevb.55.9598

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[6] J. Lindhard, V. Nielsen, and M. Scharff: K. Dan. Vidensk. Selsk. Mat. -Fys. Medd. 36, 10 (1968). Figure 2 Variation in Rd/Rp with �. Figure 1 Typical S-E curves for ion implanted Si. S parameters are normalized to the value for bulk Si.