Effect of Implanted Ion Mass and Incident Energy on Defect and Ion Depth-Distributions in Ion-Implanted Si

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Periodical:

Materials Science Forum (Volumes 445-446)

Edited by:

Toshio Hyodo, Yoshinori Kobayashi, Yasuyuki Nagashima, Haruo Saito

Pages:

108-110

DOI:

10.4028/www.scientific.net/MSF.445-446.108

Citation:

K. Hirata and Y. Kobayashi, "Effect of Implanted Ion Mass and Incident Energy on Defect and Ion Depth-Distributions in Ion-Implanted Si", Materials Science Forum, Vols. 445-446, pp. 108-110, 2004

Online since:

January 2004

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