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HomeMaterials Science ForumMaterials Science Forum Vols. 445-446Interface Properties of 4H-SiC MOS Structures...

Interface Properties of 4H-SiC MOS Structures Studied by a Slow Positron Beam

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Periodical:

Materials Science Forum (Volumes 445-446)

Pages:

144-146

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.445-446.144

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Online since:

January 2004

Authors:

Masaki Maekawa, Atsuo Kawasuso, Masahito Yoshikawa, Ayahiko Ichimiya

Keywords:

Doppler Shift, MOS Structure, Open Volume Defect, Positron Beam, SiO₂/SiC Interface

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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