Interface Properties of 4H-SiC MOS Structures Studied by a Slow Positron Beam

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Periodical:

Materials Science Forum (Volumes 445-446)

Edited by:

Toshio Hyodo, Yoshinori Kobayashi, Yasuyuki Nagashima, Haruo Saito

Pages:

144-146

DOI:

10.4028/www.scientific.net/MSF.445-446.144

Citation:

M. Maekawa et al., "Interface Properties of 4H-SiC MOS Structures Studied by a Slow Positron Beam", Materials Science Forum, Vols. 445-446, pp. 144-146, 2004

Online since:

January 2004

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$35.00

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