[1]
B. Canut, A. Benyagoub, G. Marest, A. Meftah, N. Moncoffre, S.M.M. Ramos, F. Studer, P. Thevenard and M. Toulemonde, Phys. Rev. B 51 (1995) 12194.
DOI: 10.1103/physrevb.51.12194
Google Scholar
[2]
W. Bauer-Kugelmann, P. Sperr, G. Kögel and W. Triftshauser, Materials Science Forum 262- 365 (2001) 529.
Google Scholar
[3]
M. Forster, W. Claudy, H. Hermes, M. Koch, K. Maier, J. Major, H. Stoll and H. -E. Schaefer, Materials Science Forum 105-110 (1992) 1005.
DOI: 10.4028/www.scientific.net/msf.105-110.1005
Google Scholar
[4]
Y. Nagashima, K. Kawashima, T. Hyodo, M. Hasegawa, B. T. Lee, K. Hiraga, S. Yamaguchi, M. Forster and H. E. Schaefer, Materials Science Forum 175-178 (1995) 461.
DOI: 10.4028/www.scientific.net/msf.175-178.461
Google Scholar
[5]
K. J. Caulfield, R. Cooper and J. F. Boas, Phys. Rev. B 47 (1993) 55.
Google Scholar
[6]
R. Krause-Rehberg, H. S. Leipner: Positron Annihilation in Semiconductors, Springer Verlag Berlin Heidelberg (1999).
DOI: 10.1007/978-3-662-03893-2_3
Google Scholar
[7]
V. A. Skuratov, S. J. Zinkle, A. E. Efimov, K. Havancsak, Nucl. Instr. and Methods in Physics Research B 203 (2003) 136.
Google Scholar
[8]
V. A. Skuratov, A. E. Efimov, D. L. Zagorskii, Physics of the solid state 44 (2002).
Google Scholar