White Light Emitting Diodes of GaN-Based Sr2SiO4:Eu and the Luminescent Properties
We have synthesized a Eu2+-activated Sr2SiO4yellow phosphor and investigated an attempt to develop white LEDs by combining it with a GaN blue LED chip. Two distinct emission bands from the GaN-based LED and the Sr2SiO4:Eu phosphor are clearly observed at 400 nm and at around 550 nm, respectively. These two emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (400 nm chip)-based Sr2SiO4:Eu exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.
S.-G. Kang and T. Kobayashi
J.K. Park et al., "White Light Emitting Diodes of GaN-Based Sr2SiO4:Eu and the Luminescent Properties ", Materials Science Forum, Vols. 449-452, pp. 953-956, 2004