White Light Emitting Diodes of GaN-Based Sr2SiO4:Eu and the Luminescent Properties

J.K. Park; Chang Hoi Kim; Kyung Joo Choi; H.D. Park; Se Young Choi

doi:10.4028/www.scientific.net/MSF.449-452.953

Paper Titles

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Crystallization Behaviors of the Bulk Amorphous Alloy Ni₆₀Zr₂₅Al₈Y₇
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New Cu-Based Bulk Metallic Glasses with High Strength of 2000 MPa
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Structural and Optical Features of Si-Rich SiO₂ Films Prepared by Magnetron Sputter Techniques
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White Light Emitting Diodes of GaN-Based Sr₂SiO₄:Eu and the Luminescent Properties
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Annealing Temperature Effect of PbZr_0.4Ti_0.6O₃ Film on La_1/2Sr_1/2CoO₃ Bottom Electrode
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Optical and Microstructural Properties of TiO₂, Al₂O₃ and SiO₂ Single Layers Deposited by Plasma Assisted E-Beam Evaporation
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Heat Capacities of Ln₂MnNiO₆ (Ln = Rare Earth)
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Structural Analysis of a Complex Oxide Eu₂Mn_2/3Nb_4/3O₇ with a Pyrochlore-Related Structure
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HomeMaterials Science ForumMaterials Science Forum Vols. 449-452White Light Emitting Diodes of GaN-Based...

White Light Emitting Diodes of GaN-Based Sr₂SiO₄:Eu and the Luminescent Properties

Abstract:

We have synthesized a Eu²⁺-activated Sr₂SiO₄yellow phosphor and investigated an attempt to develop white LEDs by combining it with a GaN blue LED chip. Two distinct emission bands from the GaN-based LED and the Sr₂SiO₄:Eu phosphor are clearly observed at 400 nm and at around 550 nm, respectively. These two emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (400 nm chip)-based Sr₂SiO₄:Eu exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

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Periodical:

Materials Science Forum (Volumes 449-452)

Pages:

953-956

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.449-452.953

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Online since:

March 2004

Authors:

J.K. Park, Chang Hoi Kim, Kyung Joo Choi, H.D. Park, Se Young Choi

Keywords:

Light Emitting Diode (LED), Sr₂SiO₄, Stockes Shift

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