New Understanding of Abnormal Grain Growth Approached by Solid-State Wetting along Grain Boundary or Triple Junction

Abstract:

Article Preview

Although it has been generally believed that the advantage of the grain boundary mobility induces abnormal grain growth (AGG), it is suggested that the advantage of the low grain boundary energy, which favors the growth by solid-state wetting, induces AGG. Analyses based on Monte Carlo (MC) simulation show that the approach by solid-state wetting could explain AGG much better than that by grain boundary mobility. AGG by solid-state wetting is supported not only by MC simulations but also by the experimental observation of microstructure evolution near or at the growth front of abnormally growing grain. The microstructure shows island grains and solid-state wetting along grain boundary and triple junction.

Info:

Periodical:

Materials Science Forum (Volumes 467-470)

Edited by:

B. Bacroix, J.H. Driver, R. Le Gall, Cl. Maurice, R. Penelle, H. Réglé and L. Tabourot

Pages:

745-750

DOI:

10.4028/www.scientific.net/MSF.467-470.745

Citation:

N. M. Hwang "New Understanding of Abnormal Grain Growth Approached by Solid-State Wetting along Grain Boundary or Triple Junction", Materials Science Forum, Vols. 467-470, pp. 745-750, 2004

Online since:

October 2004

Authors:

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.