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Studies of Damage Accumulation in 4H Silicon Carbide by Ion-Channeling Techniques
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p.1345

Crystal Structure and Phase Relationships in the Reduced-Reoxidized Ceria-Zirconia Solid Solution
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Material Processing and Testing of Plasma-Interactive Components for Fusion Energy Systems
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Development and High Heat Flux Testing of Plasma Facing Materials for Future Fusion Experiments
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HomeMaterials Science ForumMaterials Science Forum Vols. 475-479Defects and Ion-Solid Interactions in Silicon...

Defects and Ion-Solid Interactions in Silicon Carbide

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Abstract:

Atomic-level simulations are used to determine defect production, cascade-overlap effects, and defect migration energies in SiC. Energetic C and Si collision cascades primarily produce single interstitials, mono-vacancies, antisite defects, and small defect clusters, while amorphous clusters are produced within 25% of Au cascades. Cascade overlap results in defect stimulated cluster growth that drives the amorphization process. The good agreement of disordering behavior and changes in volume and elastic modulus obtained computationally and experimentally provides atomic-level interpretation of experimentally observed features. Simulations indicate that close-pair recombination activation energies range from 0.24 to 0.38 eV, and long-range migration energies for interstitials and vacancies are determined.

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Periodical:

Materials Science Forum (Volumes 475-479)

Pages:

1345-1350

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.475-479.1345

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Online since:

January 2005

Authors:

William J. Weber, Fei Gao, Ram Devanathan, Weilin Jiang, Y. Zhang

Keywords:

Amorphisation, Defect, Ion Implantation, Silicon Carbide (SiC)

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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