Defects and Ion-Solid Interactions in Silicon Carbide
Atomic-level simulations are used to determine defect production, cascade-overlap effects, and defect migration energies in SiC. Energetic C and Si collision cascades primarily produce single interstitials, mono-vacancies, antisite defects, and small defect clusters, while amorphous clusters are produced within 25% of Au cascades. Cascade overlap results in defect stimulated cluster growth that drives the amorphization process. The good agreement of disordering behavior and changes in volume and elastic modulus obtained computationally and experimentally provides atomic-level interpretation of experimentally observed features. Simulations indicate that close-pair recombination activation energies range from 0.24 to 0.38 eV, and long-range migration energies for interstitials and vacancies are determined.
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
W. J. Weber et al., "Defects and Ion-Solid Interactions in Silicon Carbide", Materials Science Forum, Vols. 475-479, pp. 1345-1350, 2005