Electrical and Physical Properties of Al and Nb Doped PbTiO3 Ceramic Thin Films

Bo Ping Zhang; Jing Feng Li; Yan Dong; Takashi Iijima

doi:10.4028/www.scientific.net/MSF.475-479.1587

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Plasma Sputtering and Optical Properties of Au/SiO2 Nano-Composite Films
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Gradient Microstructure Analysis of PI-SiO2 Hybrid Tubular Films
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TEM and TEM-EDX Analysis of Cross-Section of Anti-Reflective Thin Film and Glass Substrate
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Preparation and Characterization of Pb(Zr,Ti)O3 Films on SrTiO3 Substrates
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Electrical and Physical Properties of Al and Nb Doped PbTiO₃ Ceramic Thin Films
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Thermoelectric Properties on n-Type Bi_xSb_1-x /Bi₂Te₃ Graded Materials Containing Fullerite or Carbon Tube
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Chemical Solution Deposition Process and Characterization of Li and Ti Doped NiO Thin Films
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New Progress on SHS of Silicon Nitride with High α-Phase Content
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Combustion Synthesis of Carbide Particle Dispersed Aluminide Intermetallics
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HomeMaterials Science ForumMaterials Science Forum Vols. 475-479Electrical and Physical Properties of Al and Nb...

Electrical and Physical Properties of Al and Nb Doped PbTiO₃ Ceramic Thin Films

Abstract:

A series of Pb(Ti1-xAlx)O3, Pb(Ti1-xNbx)O3 and Pb(Ti1-xAlx/2Nbx/2)O3 thin films were fabricated onto Pt/Ti/SiO2/Si(100) substrates using a chemical solution deposition process. The dielectric constant of the Pb(Ti1-xAlx)O3 thin films increased with increase of aluminum content, while a maximum dielectric constant value was observed for the Pb(Ti1-xNbx)O3 and Pb(Ti1 xAlx/2Nbx/2)O3 thin films when the doping contents were 10 and 20 mol%, respectively. The dielectric constant of the Pb(Ti0.8Al0.1Nb0.1)O3 thin film is about 600, being two times higher than those of Pb(Ti0.9Al0.1)O3 and Pb(Ti0.9Nb0.1)O3 thin films. The Pb(Ti0.8Al0.1Nb0.1)O3 thin film showed less than 10-7 A/cm2 current density at ±150 kV/cm, being superior to the leakage property of the PbTiO3, Pb(Ti0.9Al0.1)O3 and Pb(Ti0.9Nb0.1)O3 thin films. The co-doping of aluminum and niobium is more effective to increase the dielectric and ferroelectric properties as compared with the individual aluminum or niobium doping.