Controlled Growth of III-V Compound Semiconductor Nano-Structures and Their Application in Quantum-Devices

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This paper reviews our work on controlled growth of self-assembled semiconductor nanostructures, and their application in light-emission devices. High-power, long-life quantum dots (QD) lasers emitting at ~1 µm, red-emitting QD lasers, and long-wavelength QD lasers on GaAs substrates have successfully been achieved by optimizing the growth conditions of QDs.

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Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

1783-1786

DOI:

10.4028/www.scientific.net/MSF.475-479.1783

Citation:

B. Xu et al., "Controlled Growth of III-V Compound Semiconductor Nano-Structures and Their Application in Quantum-Devices", Materials Science Forum, Vols. 475-479, pp. 1783-1786, 2005

Online since:

January 2005

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$35.00

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