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Controlled Growth of III-V Compound Semiconductor Nano-Structures and Their Application in Quantum-Devices

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Abstract:

This paper reviews our work on controlled growth of self-assembled semiconductor nanostructures, and their application in light-emission devices. High-power, long-life quantum dots (QD) lasers emitting at ~1 µm, red-emitting QD lasers, and long-wavelength QD lasers on GaAs substrates have successfully been achieved by optimizing the growth conditions of QDs.

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Periodical:

Materials Science Forum (Volumes 475-479)

Pages:

1783-1786

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.475-479.1783

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Online since:

January 2005

Authors:

Bo Xu, Z.G. Wang, Y.H. Chen, P. Jin, X.L. Ye, Feng Qi Liu

Keywords:

Quantum Dot (QD), Quantum-Dot Laser, Self-Assembled

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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References

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