Anti-Weak Localization of the Two Dimensional Electron Gas in Modulation-Doped AlxGa1-xN/GaN Single Quantum Well

J. Lu; B. Shen; N.J. Tang; D.J. Chen; Y.D. Zheng

doi:10.4028/www.scientific.net/MSF.475-479.1787

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HomeMaterials Science ForumMaterials Science Forum Vols. 475-479Anti-Weak Localization of the Two Dimensional...

Anti-Weak Localization of the Two Dimensional Electron Gas in Modulation-Doped Al_xGa_1-xN/GaN Single Quantum Well

Abstract:

The weak-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al0.22Ga0.78N/GaN single quantum well has been investigated through the magnetoresistance measurements. The elastic scattering time τε, dephasing time τφ and spin-orbit(s-o) scattering time τso at various temperatures are obtained. The fitting parameters indicate that the inelastic scatterings to the 2DEG are mainly due to the piezoelectric field and the alloy disorder in the AlxGa1-xN barrier. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the anti-weak localization is observed clearly, which is due to the strong spin-orbit interaction. The spin-orbit effect dominates the quantum correction of the conductivity in the upper subband. The intersubband scattering becomes stronger with increasing temperature.

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Materials Science Forum (Volumes 475-479)

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1787-1790

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.475-479.1787

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Online since:

January 2005

Authors:

J. Lu, B. Shen, N.J. Tang, D.J. Chen, Y.D. Zheng

Keywords:

AlGaN/GaN Single Quantum Well, Anti-Weak Localization, Quantum Hall Effect, Two Subband Occupation, Two-Dimensional Electron Gas

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