The Structural and Photoluminescence Character of InAs Quantum Dots Grown on a Combined InAlAs and GaAs Strained Buffer Layer

G.X. Shi; Bo Xu; P. Jin; X.L. Ye; C.X. Cui; C.L. Zhang; J. Wu; Z.G. Wang

doi:10.4028/www.scientific.net/MSF.475-479.1791

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HomeMaterials Science ForumMaterials Science Forum Vols. 475-479The Structural and Photoluminescence Character of...

The Structural and Photoluminescence Character of InAs Quantum Dots Grown on a Combined InAlAs and GaAs Strained Buffer Layer

Abstract:

The structural and photoluminescence (PL) properties of the InAs quantum dots (QDs) grown on a combined InAlAs and GaAs strained buffer layer have been investigated by AFM and PL measurements. The dependence of the critical thickness for the transition from 2D to 3D on the thickness of GaAs layer is demonstrated directly by RHEED. The effects of the introduced-InAlAs layer on the density and the aspect ratio of QDs have been discussed.

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Materials Science Forum (Volumes 475-479)

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1791-1794

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.475-479.1791

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Online since:

January 2005

Authors:

G.X. Shi, Bo Xu, P. Jin, X.L. Ye, C.X. Cui, C.L. Zhang, J. Wu, Z.G. Wang

Keywords:

InAs, Photoluminescence (PL), Quantum Dot (QD), Strain Buffer Layer

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