Preparation and Field Emission Characteristics of CNx Nanotubes Thin Film
Carbon nitride nanotubes (CN-NT) thin films were prepared on Ni-Cr coated glass substrate by microwave plasma enhanced chemical vapor deposition at a relatively low temperature of 600～650 °C. The morphology of the films were observed by scanning electron microscopy. The microstructure of the film were analyzed by x-ray photoelectron spectroscopy, x-ray diffraction, and Raman spectroscopy. The characteristics of field emission of CN-NT thin films were measured. Experimental results indicate that the film structure and properties of the field electron emission are related to flow ratio of N2 to CH4. When the flow ratio of N2 to CH4 was 3.3, the obtained film had a better field electron emission characteristics. The turn-on field of the film was 3.7 V/µm . The current density was 413.3 µA/cm2 at an electric field of 8 V/µm.
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
L. Zhang et al., "Preparation and Field Emission Characteristics of CNx Nanotubes Thin Film", Materials Science Forum, Vols. 475-479, pp. 3595-3598, 2005