In Situ HREM Studies of Grain Boundary Formation during Solidification of B-Doped Silicon

Abstract:

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In situ high-resolution transmission electron microscopy experiments were applied to examine the nano-scale solidification process of boron-doped silicon from the liquid state. Fine particles of the specimen were first heated up to the melting temperature using a TEM heating-holder, and then gradually cooled across the melting temperature. The specimen was observed nearly along [001] direction. The lattice fringe of (220) plane was observed during solidification, and this part combined with the other liquid part to make a twist boundary. The angle between the (220) planes of these two crystal grains was close to the rotation angle of the (001) Σ5 twist boundary.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

3875-3878

DOI:

10.4028/www.scientific.net/MSF.475-479.3875

Citation:

H. Fukushima et al., "In Situ HREM Studies of Grain Boundary Formation during Solidification of B-Doped Silicon", Materials Science Forum, Vols. 475-479, pp. 3875-3878, 2005

Online since:

January 2005

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$35.00

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