HVEM Study of Crack Tip Dislocations in Silicon Crystals

Kenji Higashida; Masaki Tanaka; Ryuta Onodera

doi:10.4028/www.scientific.net/MSF.475-479.4043

Paper Titles

Correlation Exchange Length in Nanocrystalline Soft Magnetic Materials Characterized by Electron Holography
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A Simple Method of the Electric/Magnetic Field Observation by a Conventional Transmission Electron Microscope
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Crystallization under 1 MeV Electron Beam Irradiation of Nanometer-Sized W-Dendrites Fabricated on Alumina Substrates with Electron-Beam-Induced Deposition
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Effect of Hydrogen on Dislocation Behavior in Ni-Cr Alloys
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HVEM Study of Crack Tip Dislocations in Silicon Crystals
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Microstructures after Processing by Aging and ECAP for Al-Mg₂Si Alloys Containing Excess Si or Mg
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Synthesis of Perovskite-Type LaMnO₃ under Hydrothermal Conditions
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On the Stability of Defects and Grain Size in Ultrafine-Grained Copper during Cyclic Deformation and Subsequent Ageing at Room Temperature
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A New Scheme for the Exit-Wave Reconstruction from a Small Set of Focus Series of HREM Images
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HomeMaterials Science ForumMaterials Science Forum Vols. 475-479HVEM Study of Crack Tip Dislocations in Silicon...

HVEM Study of Crack Tip Dislocations in Silicon Crystals

Abstract:

The present paper describes the nature of crack tip plasticity in silicon crystals examined by high voltage electron microscopy (HVEM) and atomic force microscopy (AFM). Firstly, AFM images around a crack tip are presented, where the formation of fine slip bands with the step heights of one or two nanometers is demonstrated. Secondly, crack-tip dislocations observed by HVEM are exhibited, where it is emphasized that dislocation characterization is essential to consider the relief mechanism of crack-tip stress concentration.

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Periodical:

Materials Science Forum (Volumes 475-479)

Pages:

4043-4046

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.475-479.4043

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Online since:

January 2005

Authors:

Kenji Higashida, Masaki Tanaka, Ryuta Onodera

Keywords:

Atomic Force Microscope (AFM), Focused Ion Beam (FIB), High-Voltage Electron Microscopy, Shielding Effect, Stress Intensity Factor (SIF), TEM

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DOI: 10.1080/01418610210141307

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