HVEM Study of Crack Tip Dislocations in Silicon Crystals

Abstract:

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The present paper describes the nature of crack tip plasticity in silicon crystals examined by high voltage electron microscopy (HVEM) and atomic force microscopy (AFM). Firstly, AFM images around a crack tip are presented, where the formation of fine slip bands with the step heights of one or two nanometers is demonstrated. Secondly, crack-tip dislocations observed by HVEM are exhibited, where it is emphasized that dislocation characterization is essential to consider the relief mechanism of crack-tip stress concentration.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

4043-4046

DOI:

10.4028/www.scientific.net/MSF.475-479.4043

Citation:

K. Higashida et al., "HVEM Study of Crack Tip Dislocations in Silicon Crystals", Materials Science Forum, Vols. 475-479, pp. 4043-4046, 2005

Online since:

January 2005

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Price:

$35.00

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