Photoelectrochemical Measurements on Cathodically Electrodeposited Films of Cadmium and Zinc Chalcogenide Compounds

Abstract:

A variety of electrochemical and electrical techniques is employed in order to determine useful parameters of the optical behaviour of thin semiconducting films. In particular, this work is intended to the characterization of cathodically electrodeposited binary and ternary cadmium and zinc selenides and tellurides by photoelectrochemical (PEC) tests. Typical solid-state techniques, such as reflection, laser assisted photoreflection, resistivity and Hall effect measurements are used as well. A plain relation between crystal structure/film morphology and PEC behavior is established so long as the electrochemical preparation method is capable to explicitly control the deposit structure. In certain cases, a particular charge transfer mechanism in the semiconductor, associated with the existence of a nanostructure, is shown to result in higher photoconversion efficiencies as compared to larger-grained films.

• Periodical: Materials Science Forum (Volumes 480-481)
• Pages: 1-12
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.480-481.1
• Online since: March 2005
• Authors: M. Bouroushian, T. Kosanovic
• Keywords: Carrier Generation, Carrier Recombination, Crystalline Structure and Texture, Electro-Deposition, Hall Measurements, II-VI Semiconductors, Nanocrystalline Material, Optical Properties of Thin Films, Semiconductor Photoelectrochemistry

References

[1] O. Savadogo: Sol. Ener. Mater. & Sol. Cells Vol. 52 (1998), p.361.

[2] C.D. Lokhande, P.S. Patil, H. Tributsch and A. Ennaoui: Sol. Ener. Mater. & Sol. Cells Vol. 55 (1998), p.379.

[3] R.D. Rauh: Cadmium Chalcogenides (CdS, CdSe, CdTe) in Semiconductor Electrodes, Ed. by H.O. Finklea (Elsevier, Amsterdam 1988) vol. 55, ch. 6, p.277.

[4] M. Bouroushian, Z. Loizos, N. Spyrellis and G. Maurin: Thin Solid Films Vol. 229 (1993), p.101.

[5] G. Hodes: Electrodeposition of II-VI Semiconductors in Physical Electrochemistry - Principles, Methods and Applications, Ed. by I. Rubinstein (Marcel Deccer, Inc. 1995) ch. 11, p.515.

[6] M. Bouroushian, J. Charoud-Got, Z. Loizos, N. Spyrellis and G. Maurin: Thin Solid Films Vol. 381 (2001), p.39.

DOI: 10.1016/s0040-6090(00)01687-4

[7] M. Bouroushian, T. Kosanovic, Z. Loizos and N. Spyrellis: J. Solid State Electrochem. Vol. 6 (2002), p.272.

DOI: 10.1007/s100080100215

[8] M. Bouroushian, Z. Loizos and N. Spyrellis: Appl. Surf. Sci. Vol. 156 (2000), p.125.

[9] O.H. Finklea: Semiconductor Electrode Concepts and Terminology in Semiconductor Electrodes, Ed. by H.O. Finklea (Elsevier, Amsterdam 1988) Vol. 55, ch. 1, p.18, 27.

[10] M.A. Butler: J. App. Phys. Vol. 48/5 (1977), p. (1914).

[11] D.C. Ginley and M.A. Butler: J. App. Phys. Vol. 48/5 (1977), p. (2019).

[12] S.R. Morrison: Electrochemistry at Semiconductor and oxidized Metal Electrodes (Plenum Press, New York SRI Int. 1980) ch. 2, p.77, ch. 5, p.185.

[13] M. Takahashi, K. Uosaki, H. Kita and S. Yamaguchi: J. Appl. Phys. Vol 60/6 (1986), p. (2046).

[14] A.J. Windheim, H. Wynands and M. Cosivera: J. Electrochem. Soc. Vol. 138/11 (1991), p.3435.

[15] Handbook of Chemistry and Physics, Ed. by D. R. Lide (CRC Press, 71st Ed. 1990-91).

[16] K. Rajeshwar, L. Thompson, P. Singh, R.C. Kainthla and K.L. Chopra: J. Electrochem. Soc. Vol. 128/8 (1981), p.1744.

[17] M. Smiley, R.N. Biagioni and A.B. Ellis: J. Electrochem. Soc. Vol. 131/5 (1984), p.1068.

[18] G. Hodes, I.D.J. Howell and L.M. Peter: J. Electrochem. Soc. Vol. 139/11 (1992), p.3136.