GaAs/AlGaAs Quantum Cascade Lasers Based on Double Resonant Electron – LO Phonon Transitions

Abstract:

In this paper a procedure for the global optimization of mid-infrared GaAs/AlGaAs quantum cascade lasers that relies on the method of simulated annealing is presented. We propose a double longitudinal optical phonon resonance design obtained via a ladder of three states, with subsequent pairs separated by optical phonon energy. Addition of an extra level decreases the lower laser level population by enabling an efficient extraction into the injector region. The output characteristics of the optimized structures are calculated using the full self–consistent rate equation model, which includes all of the relevant scattering mechanisms. We also presented the experimentally measured output characteristics of an initial device, which are in agreement with the numerically calculated values, confirming the good design capabilities of the applied procedure.

• Periodical: Materials Science Forum (Volume 494)
• Pages: 25-30
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.494.25
• Online since: September 2005
• Authors: A. Mirčetić, D. Indjin, V. Milanović, P. Harrison, Z. Ikonić, R.W. Kelsall, M. Giehler, R. Hey, H.T. Grahn
• Keywords: Double Resonant Electron-LO Phonon Transition, Quantum Cascade Laser, Self-Consistent, Simulated Annealing (SA)

References

[1] J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, Z. Cho, Science, 264 (1994), p.553.

[2] C. Sirtori, H. Page, C. Becker, V. Ortiz, IEEE J. Quantum Electron., 38 (2002), p.547.

[3] C. Sirtori, P. Kruck, S. Barbieri, P. Collot, J. Nagle, M. Beck, J. Faist, U. Oesterle, Appl. Phys. Lett., 73 (1998), p.3486.

DOI: 10.1063/1.122812

[4] A. Tredicucci, 7th Conf. on Intersubband Transitions in Quantum Wells, Evolène, Switzerland, 87 (2003).

[5] M. Beck, D. Hofstetter, T. Aellen, S. Blaser, J. Faist, U. Oesterle, E. Gini, J. Cryst. Growth, 251 (2003), p.697.

DOI: 10.1016/s0022-0248(02)02424-7

[6] P. Kruck, H. Page, C. Sirtori, S. Barbieri, M. Stellmacher, J. Nagle, Appl. Phys. Lett, 76 (2000), p.3340.

DOI: 10.1063/1.126686

[7] D. Indjin, P. Harrison, R. W. Kelsall, Z. Ikonić, J. of Appl. Phys., 91 (2002), p.9019.

[8] D. Indjin, P. Harrison, R. W. Kelsall, Z. Ikonić, Appl. Phys. Lett, 81 (2002), p.400.

[9] D. Indjin, P. Harrison, R. W. Kelsall, Z. Ikonić, IEEE Photon. Technol. Lett, 15 (2003), p.15.

[10] D. Indjin, P. Harrison, R. W. Kelsall, Z. Ikonić, Appl. Phys. Lett, 82 (2003), p.1347.

[11] J. Faist, D. Hofstetter, M. Beck, T. Aellen, M. Rochat, S. Blaser, IEEE J. Quantum Electron., 38 (2002), p.533.

DOI: 10.1109/jqe.2002.1005404

[12] N. Imam, E. N. Glytsis, and T. K. Gaylord, Superlattices Microstruct. 30 (2001), p.29.

[13] J. Radovanović, V. Milanović, Z. Ikonić, and D. Indjin, Semicond. Sci. Technol. 17 (2002), p.716.

[14] H. Page, C. Becker, A. Robertson, G. Glastre, V. Ortiz, and C. Sirtori, Appl. Phys. Lett. 78 (2001).

[6] The symbols correspond to the calculated data, while the lines represent the least square fit, which can be used to estimate the gain coefficient g. The threshold currents can be obtained from the intersection points with the total loss line αM+αW~20cm -1. 0 5 10 15 20 25 30 0 10 20 30 40 50 60 70 80 TQW T=77K 2LO 4QW T=77K 2LO step-like T=77K TQW T=300K 2LO 4QW T=300K 2LO step-like T=300K J[kA/cm ] 2 G [cm ] -1 M α αM W+.