Application of In Situ HREM to Study Crystallization in Materials

Abstract:

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A review is given of the application of in situ transmission electron microscopy to study various processes associated with the crystallization of amorphous thin films. Solid phase epitaxial regrowth of ion-implanted silicon is compared with nucleation and growth in deposited thin films. The mechanism of metal-mediated crystallization is deduced directly from high resolution recordings, and the kinetics of tantalum oxide devitrefication are obtained. The advantages of direct in situ observation are described

Info:

Periodical:

Edited by:

Dragan P. Uskokovic, Slobodan K. Milonjic, Djan I. Rakovic

Pages:

7-12

DOI:

10.4028/www.scientific.net/MSF.494.7

Citation:

R. Sinclair et al., "Application of In Situ HREM to Study Crystallization in Materials", Materials Science Forum, Vol. 494, pp. 7-12, 2005

Online since:

September 2005

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$35.00

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