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HomeMaterials Science ForumMaterials Science Forum Vol. 494Application of In Situ HREM to Study...

Application of In Situ HREM to Study Crystallization in Materials

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Abstract:

A review is given of the application of in situ transmission electron microscopy to study various processes associated with the crystallization of amorphous thin films. Solid phase epitaxial regrowth of ion-implanted silicon is compared with nucleation and growth in deposited thin films. The mechanism of metal-mediated crystallization is deduced directly from high resolution recordings, and the kinetics of tantalum oxide devitrefication are obtained. The advantages of direct in situ observation are described

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Current Research in Advanced Materials and Processes

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Periodical:

Materials Science Forum (Volume 494)

Pages:

7-12

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.494.7

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Online since:

September 2005

Authors:

R. Sinclair, Kyung Hoon Min, U. Kwon

Keywords:

Crystallization, High Resolution Imaging, Silicon, Tantalum Oxide, TEM

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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